RF power, substrate temperature and duration time fixed at 150W,200 °Cand 15 minutes.
2.2. Characterization
The crystallographic information of the deposited films was obtained using X-raydiffraction (XRD) spectra (X’ pert PRO, Phillips. Eindhoven, Netherlands). The surface morphology and roughness of the films was observed by field emission scanning electron microscopy (FE-SEM, Model: J
The GZO, MZO thinfilms were prepared on ZnO pre-sputtered glass substrate using RFSputtering Technique. Morphological, Structural and Electrical properties of deposited films were investigated in comparison with pure ZnO Thinfilmby scanning electronic microscopy (SEM), Atomic force microscopy (AFM), X-ray diffraction (XRD), PL spectra and other electrical analytic method. SEM images showed al
by increasing the accelerating voltage from 5kV to 15kV improved the EDS acquisitionby taking advantage of the high peak-to-background ratio inherent in thin specimens, such as carbon extraction replicas, due to the small interaction volume.
3. Growth of single crystal bulk
3.1 Design
Molecular formula
CuSO₄5H₂O
Melting point
16136℃
Specific gravity
2.284g/ml
film.
High vacuum should be kept in
the chamber not to contain
oxigen
gas which damages
substrate surface
After reaching sufficient
vacuum, argon gas is added
into the chamber to generate
argon cation.
The gas ion have a collisionon
the targeting material affording
to a electron emmition.
The electrons are deposited on
the surface of substrate forming
metalic
process
Fast deposition speed
Cheap process device
1. Partially different thickness
2. Difficult to control the element ratio
3. Hard to deposition the complex material layer
4. Low film quality
3.Material to be evaporated by e-beam
- E-beam dashes against
material
- E-beam transport energy
to the material
- Then evaporation process
is start
and varying physical properties for surface
A variety of molecules such as protein, peptide and gelatin, have been successfully bound on surface of materials.
Application : improvements
•The plasma method gives more enhanced strength to these ceramics as compare to conventional method
•Coating film of the uniform thickness
•more improvement of mechanical properties
by direction of bias
side. These charges are generated by ions came in the process of deposition of oxide layer. When the charges exist in between the substrate and interface, the value of Vfb and C-V curve will shift by amount of the charge divided by Cox of Ci. The amount of shifting decreases as the position of fiexed charges is far from interface on the substrate and shifting will not exist
- 가장 보편화된 나노기술현재 인간이 가지고 있는 보편화된 기술 중 가장 미세한 구조물을 만들어내는 방법이 있다면 그것은 포토리소그래피일 것이다.포토리소그래피는 실제 전자집적회로> 제작에 사용되는 기술로써 그 원리는 다음과 같다.크롬층과 유리기판의 맨 위에 놓인 감광고분자 막 위에 레
영문판으로 출간되었다고 한다.
② 1978, Dr. Mimura가 GaAs MOSFET이 왜 수용되지 않은지 설명하고 연구를 중지하였다. 그 후, Dr.Yokoyama는 GaAs LSI의 개발을 했다. 계속하여, RHET(Resonant tunneling Hot Electron Transistor),를 개발하고 quantum mechanics의 전자구조효과를 적용하였다.
③ 1979, Dr.Mimira가 Bell 실험소의 Dr.Dingle에